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首页>IPD65R1K4C6>芯片详情
IPD65R1K4C6_INFINEON/英飞凌_Metal Oxide Semiconductor Field Effect Transistor柒号芯城
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产品属性
- 类型
描述
- 型号
:IPD65R1K4C6
- OPN
:IPD65R1K4C6ATMA1
- Qualification
:Non-Automotive
- Package name
:PG-TO252-3
- VDS max
:650 V
- RDS (on) @10V max
:1400 mΩ
- ID @25°C max
:3.2 A
- QG typ @10V
:10.5 nC
- Polarity
:N
- Operating Temperature min
:-55 °C
- VGS(th) min
:2.5 V
- VGS(th) max
:3.5 V
- Technology
:CoolMOS™ C6
供应商
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