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IPD60R3K3C6中文资料英飞凌数据手册PDF规格书
IPD60R3K3C6规格书详情
描述 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
特性 Features
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-Free plating
• Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting. Server, Telecom and
UPS.
产品属性
- 型号:
IPD60R3K3C6
- 功能描述:
MOSFET N-CH 650V 1.7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
询价 | ||
INFINEON |
24+ |
TO-252 |
8000 |
原装,正品 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO252 |
10000 |
全新原装 公司现货 价格优 |
询价 | ||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
INFINEON/英飞凌 |
24+ |
TO-252 |
5000 |
只做原厂渠道 可追溯货源 |
询价 | ||
INFINEON/英飞凌 |
12+ |
TO-252 |
2254 |
原装现货 |
询价 | ||
INFINEON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
INFINEON |
16+11+PBF |
TO-252 |
25000 |
现货 |
询价 | ||
Infineon/英飞凌 |
20+ |
TO252 |
16300 |
终端可免费提供样品,欢迎咨询 |
询价 |