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IPD60R3K3C6中文资料英飞凌数据手册PDF规格书
IPD60R3K3C6规格书详情
描述 Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
特性 Features
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Very high commutation ruggedness
• Easy to use/drive
• JEDEC1) qualified, Pb-Free plating
• Halogen free mold compound
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting. Server, Telecom and
UPS.
产品属性
- 型号：
IPD60R3K3C6
- 功能描述：
MOSFET N-CH 650V 1.7A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
PG-TO252-3 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO252-3 |
6820 |
只做原装,质量保证 |
询价 | ||
INFINEON/英飞凌 |
24+ |
NA/ |
10750 |
原装现货,当天可交货,原型号开票 |
询价 | ||
Infineon |
23+ |
PG-TO252-3 |
15500 |
英飞凌优势渠道全系列在售 |
询价 | ||
INFINEON/英飞凌 |
11+ |
TO252 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINEON/英飞凌 |
24+ |
SOT-252 |
17531 |
原装进口假一罚十 |
询价 | ||
INFINEON/英飞凌 |
2022+ |
DPAK |
48000 |
只做原装,原装,假一罚十 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-252-2(DPAK) |
19850 |
原装正品,假一赔十 |
询价 | ||
INFINEON |
1147+ |
DPAK |
158 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 |
