IPD60R180P7S数据手册Infineon中文资料规格书

描述 Description

The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

特性 Features

Efficiency

• 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
Ease-of-use

• Integrated ESD diode from 180mN and above R DS(on)s
• Integrated gate resistor R G
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

优势:
Efficiency

• Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated R G reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

应用 Application

• TV power supply
• Industrial SMPS
• Server
• Telecom 
• Lighting