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IPD06N03LAG

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD06N03LBG

OptiMOS짰2Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD06N03LZ

Idealforhigh-frequencydc/dcconverters

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPD06N03LZG

Idealforhigh-frequencydc/dcconverters

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPF06N03LA

OptiMOS2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPF06N03LA

OptiMOS2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDECfortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPF06N03LA

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPF06N03LAG

OptiMOS짰2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •QualifiedaccordingtoJEDEC1)fortargetapplication •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPI06N03LA

OptiMOS2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IPP06N03LA

OptiMOS2Power-Transistor

Features •Idealforhigh-frequencydc/dcconverters •N-channel •Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •175°Coperatingtemperature •dv/dtrated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    IPD06N03LA G

  • 功能描述:

    MOSFET N-CH 25V 50A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON
23+
TO-252
8000
只做原装现货
询价
INFINEON
23+
TO-252
7000
询价
INFINEO
24+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INFINEON
1932+
TO-252
788
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON
2022+
TO-252
57550
询价
INFINEON/英飞凌
23+
TO-252
11220
英飞凌优势原装IC,高效BOM配单。
询价
Infineon(英飞凌)
21+
TO-252
916
原装现货,假一罚十
询价
INFINEON/英飞凌
22+
TO-252
88669
询价
INFINEON
24+
TO-252
6000
公司渠道现货
询价
INFINEON
24+
TO-252
8500
原厂原包原装公司现货,假一赔十,低价出售
询价
更多IPD06N03LA G供应商 更新时间2025-6-12 15:01:00