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IPB60R190C6中文资料英飞凌数据手册PDF规格书

IPB60R190C6
厂商型号

IPB60R190C6

功能描述

Metal Oxide Semiconductor Field Effect Transistor

文件大小

2.20584 Mbytes

页面数量

19

生产厂商 Infineon Technologies AG
企业简称

INFINEON英飞凌

中文名称

英飞凌科技股份公司官网

原厂标识
INFINEON
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-4 20:47:00

人工找货

IPB60R190C6价格和库存,欢迎联系客服免费人工找货

IPB60R190C6规格书详情

描述 Description

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

特性 Features

• Extremely low losses due to very low FOM Rdson*Qg and Eoss

• Very high commutation ruggedness

• Easy to use/drive

• JEDEC1) qualified, Pb-free plating, Halogen free

Applications

PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS.

产品属性

  • 型号:

    IPB60R190C6

  • 功能描述:

    MOSFET 600V CoolMOS C6 Power Transistor

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商 型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
23+
PG-TO263
12700
买原装认准中赛美
询价
三年内
1983
只做原装正品
询价
INFINEON/英飞凌
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
询价
INFINEON/英飞凌
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
Infineon/英飞凌
24+
PG-TO263
6000
全新原装深圳仓库现货有单必成
询价
INFINEON/英飞凌
24+
TO263
880000
明嘉莱只做原装正品现货
询价
Infineon/英飞凌
21+
PG-TO263
6820
只做原装,质量保证
询价
Infineon/英飞凌
24+
PG-TO263
25000
原装正品,假一赔十!
询价
INFINEON
20+
TO263
640
全新原装公司现货
询价
INFINEON/英飞凌
23+
TO-263
15000
全新原装现货,价格优势
询价