N 沟道功率 MOSFET

Lowest on-state resistance in small footprint packages make OptiMOS™3 30V the best choice for the demanding requirements of battery management, Or-ing, e-fuse and hot-swap application. • Lowest on-state resistance\n• High DC and pulsed current capability\n• Easy to design-in\n\n优势:\n• Increased battery lifetime and system efficiency\n• Saving space (reducing the number of devices needed)\n• Saving costs;

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英飞凌

OptiMOS짧3 Power-Transistor, 30 V

文件：1.09292 Mbytes 页数：11 Pages

Infineon

英飞凌

OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • Pb-free plating; RoHS compliant

文件：500.38 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS짧3 Power-Transistor, 30 V

文件：1.09292 Mbytes 页数：11 Pages

Infineon

英飞凌