IPA60R120P7中文资料优化的超结 MOSFET，兼具高能效和易用性数据手册Infineon规格书

描述 Description

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

特性 Features

Efficiency

• 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Ease-of-use

• Integrated ESD diode from 180mN and above RDS(on)s
• Integrated gate resistor RG
• Rugged body diode
• Wide portfolio in through hole and surface mount packages
• Both standard grade and industrial grade parts are available

优势:
Efficiency

• Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use

• Ease-of-use in manufacturing environments by stopping ESD failures occurring
• Integrated RG reduces MOSFET oscillation sensitivity
• MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
• Excellent ruggedness during hard commutation of the body diode seen in LLC topology
• Suitable for a wide variety of end applications and output powers
• Parts available suitable for consumer and industrial applications

应用 Application

• TV power supply
• Industrial SMPS
• Server
• Telecom
• Lighting

简介

IPA60R120P7属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的IPA60R120P7晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。