2A/1A charging, 2 A discharge high integration mobile power SoC

文件：839.94 Kbytes 页数：14 Pages

INJOINIC

英集芯科技

Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

文件：306.3 Kbytes 页数：15 Pages

PHI

PHI

Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

文件：202.37 Kbytes 页数：17 Pages

PHI

PHI

Wideband variable gain amplifier

DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controll

文件：202.37 Kbytes 页数：17 Pages

PHI

PHI