1. 5A Charging 1.5 A(max) Discharge Highly Integrated Mobile Power SOC

文件：1.06002 Mbytes 页数：9 Pages

INJOINIC

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Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provid

文件：193.69 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

文件：81.91 Kbytes 页数：8 Pages

IRF

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文件：550.83 Kbytes 页数：4 Pages

HOTTECH

合科泰