Most Rugged in Industry? Logic-LevelGateDrive? > 6KV ESD Gate Protection? Low Saturation Voltage? High Self-clamped Inductive Switching Energy? Lead-FreeDescriptionThe advanced IGBT process family includes aMOS gated, N-channel logic level device whichis intended for coil-on-plug automotive ignitionapplications and_small-engine ignition circuits.Unique features include on-chip active voltageclamps between the Gate-Emitter andGate-Collector which provide over voltageprotection capability in ignition circuits.CollectorEmitterGateR2R1TERMINAL DIAGRAMNOTE: IRGS14C40L is available in tape and_reel. Add a suffix ofTRR or TRL to the part number to determine the orientation of thedevice in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.JEDEC TO-220ABIRGB14C40LJEDEC TO-262AAIRGSL14C40LJEDEC TO-263ABIRGS14C40L?BVCES = 370V min, 430V max?IC @ TC = 110°C = 14A?VCE(on) typ= 1.2V @7A @25°C?IL(min)=11.5A @25°C,L=4.7mHAbsolute Maximum RatingsParameterMaxUnitConditionVCESCollector-to-Emitter VoltageClampedVRG = 1K ohmIC @ TC = 25°CContinuous Collector Current20AVGE = 5VIC @ TC = 110°CContinuous Collector Current14AVGE = 5VIGContinuous Gate Current1mAIGpPeak Gate Current10mA tPK = 1ms, f = 100HzVGEGate-to-Emitter VoltageClampedVPD @ TC = 25°CMaximum Power Dissipation125WPD @ T = 110°C Maximum Power Dissipation54WTJOperating Junction and- 40 to 175°CTSTGStorage Temperature Range- 40 to 175°CVESDElectrostatic Voltage6KV C = 100pF, R = 1.5K ohmILSelf-clamped Inductive Switching Current11.5AL = 4.7mH, T = 25°CThermal ResistanceParameterMinTypMaxUnitRθJCThermal Resistance, Junction-to-Case1.2RθJAThermal Resistance, Junction-to-Ambient40°C/W(PCB Mounted, Steady State)ZθJCTransient Thermal Impedance, Juction-to-Case (Fig.11
供应IR品牌 IRGS14C40LPBF 原装现货联系QQ1640951075
2024-10-25 8:56:00
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供应IR品牌 IRGS14C40LPBF 原装现货
供应商
- 企业:
深圳兆威电子有限公司
- 商铺:
- 联系人:
Demi 熊小姐
- 手机:
13823576937
- 询价:
- 电话:
0755-82532883
- 传真:
0755-83203002
- 地址:
广东深圳龙岗区坂田街道中兴路11号城市山海中心C栋606-608
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