Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 61nC @ 18V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 500V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 10A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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