Distinctive Characteristics
Density
– 1 Gbit / 2 Gbit / 4 Gbit
Architecture
– Input / Output Bus Width: 8-bits / 16-bits
– Page Size:
– x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area
– x16 = 1056 (1024 + 32) words; 32 words is spare area
– Block Size: 64 Pages
– x8 = 128k + 4k bytes
– x16 = 64k + 2k words
– Plane Size:
– 1 Gbit / 2 Gbit: 1024 Blocks per Plane
x8 = 128M + 4M bytes
x16 = 64M + 2M words
– 4 Gbit: 2048 Blocks per Plane
x8 = 256M + 8M bytes
x16 = 128M + 4M words
– Device Size:
– 1 Gbit: 1 Plane per Device or 128 Mbyte
– 2 Gbit: 2 Planes per Device or 256 Mbyte
– 4 Gbit: 2 Planes per Device or 512 Mbyte
NAND Flash Interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data and Commands multiplexed
Supply Voltage
– 3.3V device: Vcc = 2.7V ~ 3.6V
Security
– One Time Programmable (OTP) area
– Hardware program/erase disabled during power transition
Additional Features
– 2 Gb and 4 Gb parts support Multiplane Program and Erase
commands
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back Program
– Supports Read Cache
Electronic Signature
– Manufacturer ID: 01h
Operating Temperature
– Industrial: -40°C to 85°C
– Automotive: -40°C to 105°C
Performance
Page Read / Program
– Random access: 25 µs (Max)
– Sequential access: 25 ns (Min)
– Program time / Multiplane Program time: 200 µs (Typ)
Block Erase (S34ML01G1)
– Block Erase time: 2.0 ms (Typ)
Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1)
– Block Erase time: 3.5 ms (Typ)
Reliability
– 100,000 Program / Erase cycles (Typ)
(with 1 bit ECC per 528 bytes (x8) or 264 words (x16))
– 10 Year Data retention (Typ)
– Blocks zero and one are valid and will be valid for at least 1000
program-erase cycles with ECC
Package Options
– Lead Free and Low Halogen
– 48-Pin TSOP 12 x 20 x 1.2 mm
– 63-Ball BGA 9 x 11 x 1 mm
