Features ? Fast Read Access Time - 120 ns ? Automatic Page Write Operation Internal Address and Data Latches for 128-Bytes Internal Control Timer ? Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation ? Low Power Dissipation 80 mA Active Current 300 μA CMOS Standby Current ? Hardware and Software Data Protection ? DATA Polling for End of Write Detection ? High Reliability CMOS Technology Endurance: 10 4 or 10 5 Cycles Data Retention: 10 Years ? Single 5V ± 10% Supply ? CMOS and TTL Compatible Inputs and Outputs ? JEDEC Approved Byte-Wide Pinout Description The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
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