INF85116中文资料INTEGRAL数据手册PDF规格书

2048 х 8 -Bit CMOS EEPROM with I2С-bus interface

The INF85116N is an 16-Kbits (2048 x 8-bit) floating gate Electrically Erasable Programmable Read Only Memory (EEPROM). Power consumption is low due to the full CMOS technology used. The programming voltage is generated on-chip, using a voltage multiplier. As data bytes are received and transmitted via the serial I2C-bus, a package using eight pins is sufficient. Only one INF85116N device is required to support all eight blocks of 256 x 8-bit each.

FEATURES

• Low power CMOS

-maximum active current 1.0 mA

-maximum standby current 10 µA (at 5.5 V), typical 4 µA

• Non-volatile storage of 16-Kbits organized as eight blocks of 256x8-bits during 20 years ( at 55°C )

• Single supply (Ucc=2,7 ÷ 5,5 V);

• Automatically increased words address

• On-chip voltage multiplier

• Serial input/output I2C-bus

• 1000000 ERASE/WRITE cycles per byte

• Internal timer for writing (no external components)

• Write operations: multi byte write mode to 32 bytes

• Write - protection input

• Power-on-reset

• Temperature range: -40°C ÷ +85°C