丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SOIC(D)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SON(DRG)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SON(DRG)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SON(DRG)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器

丝印：INA821；Package：SON(DRG)；INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier

1 Features 1• Low offset voltage: 10 μV (typ), 35 μV (max) • Gain drift: 5 ppm/°C (G = 1), 35 ppm/°C (G > 1) (max) • Noise: 7 nV/√Hz • Bandwidth: 4.7 MHz (G = 1), 290 kHz (G = 100) • Stable with 1-nF capacitive loads • Inputs protected up to ±40 V • Common-mode rejection: 112 dB, G = 10 (m

文件：2.38322 Mbytes 页数：50 Pages

TI

德州仪器