丝印：INA592；Package：SOIC(D)；INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

文件：3.08042 Mbytes 页数：49 Pages

TI

德州仪器

丝印：INA592；Package：SOIC；INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.32222 Mbytes 页数：45 Pages

TI

德州仪器

丝印：INA592；Package：SOIC；INA592 High-Precision, Wide-Bandwidth e-trim??Difference Amplifier

文件：3.5537 Mbytes 页数：48 Pages

TI

德州仪器

丝印：INA592；Package：SOIC(D)；INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier

1 Features • G = 1/2 amplifier • G = 2 amplifier • Low offset voltage: 40 μV (maximum) • Low offset voltage drift: ±2 μV/°C (maximum) • Low noise: 18 nV/√Hz at 1 kHz • Low gain error: ±0.03% (maximum) • High common-mode rejection: 88 dB (minimum) • Wide bandwidth: 2 MHz GBW • Low quie

文件：3.08042 Mbytes 页数：49 Pages

TI

德州仪器