INA333SHKJ.A中文资料德州仪器数据手册PDF规格书

FEATURES

• Low Offset Voltage: 25 μV (max at 25°C),

G ≥ 100

• Low Drift: 0.2 μV/°C, G ≥ 1000

• Low Noise: 55 nV/√Hz, G ≥ 100

• High CMRR: 100 dB (min at 25°C), G ≥ 10

• Supply Range: +1.8 V to +5.5 V

• Input Voltage: (V–) +0.1 V to (V+) –0.1 V

• Output Range: (V–) +0.05 V to (V+) –0.05V

• Low Quiescent Current: 198 μA

• RFI Filtered Inputs

APPLICATIONS

• Down-Hole Drilling

• High Temperature Environments

SUPPORTS EXTREME TEMPERATURE

APPLICATIONS

• Controlled Baseline

• One Assembly/Test Site

• One Fabrication Site

• Available in Extreme (–55°C/210°C)

Temperature Range (1)

• Extended Product Life Cycle

• Extended Product-Change Notification

• Product Traceability

• Texas Instruments' high temperature products

utilize highly optimized silicon (die) solutions

with design and process enhancements to

maximize performance over extended temperatures.

DESCRIPTION

The INA333 is a low-power, precision instrumentation amplifier offering excellent accuracy. The versatile 3-op

amp design, small size, and low power make it ideal for a wide range of portable applications.

A single external resistor sets any gain from 1 to 1000. The INA333 is designed to use an industry-standard gain

equation: G = 1 + (100kΩ/RG).

The INA333 provides very low offset voltage (25 μV at 25°C, G ≥ 100), excellent offset voltage drift (0.2 μV/°C,

G ≥ 100), and high common-mode rejection (100 dB at 25°C, G ≥ 10). It operates with power supplies as low as

1.8 V (±0.9V), and quiescent current is only 50 μA—ideal for battery-operated systems. Using autocalibration

techniques to ensure excellent precision over the extended industrial temperature range, the INA333 also offers

exceptionally low noise density (55 nV/√Hz) that extends down to dc.

The INA333 is is specified over the TA = –55°C to +210°C temperature range.