High-Side or Low-Side Measurement, Bidirectional Current and Power Monitor With I2C-, SMBus-, and PMBus-Compatible Interface

文件：681.89 Kbytes 页数：48 Pages

TI

德州仪器

Package：10-TFSOP，10-MSOP（0.118"，3.00mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 功能：电流监控器 类别：集成电路（IC） 电流调节/管理 描述：CURRENT SHUNT POWER MONITOR WITH

TI

德州仪器

N-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (Standard)

文件：212.01 Kbytes 页数：5 Pages

Samsung

三星

N-Channel Power MOSFETs, 12A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V

文件：177.14 Kbytes 页数：6 Pages

Fairchild

仙童半导体

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：69.65 Kbytes 页数：7 Pages

Intersil