INA213CIRSWT

Marking：16W；Package：UQFN；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1Features •UpdatedformattomatchnewTIlayoutandflow. Tables,figuresandcross-referencesuseanew numberingsequencethroughoutthedocument. WideCommon-ModeRange:–0.3Vto26V •OffsetVoltage:±35μV(Maximum,INA210) (EnablesShuntDropsof10-mVFull-Scale) •Accuracy: –

INA213CIRSWT

Voltage Output, Low- or High-Side Measurement, Bidirectional

INA213CIRSWT

Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

IQS213

3-ChannelCapacitiveTouch/SwipeFunctionController

IQS213A

Sub5關A*currentconsumption(?쏾ero-Power??electronicswitch).

IQS213A

3-ChannelCapacitiveTouch/SwipeFunctionController

IR213

600Vthree-phasegatedriverICwithOCP,Enable,andFault

Description TheIR2136x(J&S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswiththreeindependenthighandlowsidereferencedoutputchannelsfor3-phaseapplications.ProprietaryHVICtechnologyenablesruggedizedmonolithicconstruction.LogicinputsarecompatiblewithCMOSorL

IRFD213

0.6AAND0.45A,150VAND200V,1.5AND2.4OHM,N-CHANNELPOWERMOSFETS

TheseareadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching

IRFF213

RELDEFFECTPOWERTRANSISTOR

ISO213

Two-PortIsolated,LowProfileISOLATEDINSTRUMENTATIONAMPLIFIER