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IMT65R020M2H

Marking:65R020M2;Package:PG-HSOF-8;CoolSiC™ MOSFET 650 V G2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMBG65R020M2H

MOSFETCoolSiCªMOSFET650VG2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMDQ65R020M2H

CoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMLT65R020M2H

SiCMOSFETCoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMTA65R020M2H

SiCMOSFETCoolSiC™MOSFET650VG2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMW65R020M2H

MOSFETCoolSiCªMOSFET650VG2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IMZA65R020M2H

MOSFETCoolSiCªMOSFET650VG2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
Infineon/英飞凌
25+
原厂封装
10280
原装正品现货
询价
Infineon
23+
PG-HSOF-8
15500
英飞凌优势渠道全系列在售
询价
INFINEON/英飞凌
21+
QFN
3000
正规渠道原装正品
询价
Infineon(英飞凌)
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
nanotec
24+
500000
行业低价,代理渠道
询价
NANOTEC
23+
原厂封装
9888
专做原装正品,假一罚百!
询价
Nanotec
18+
ZIP-25
85600
保证进口原装可开17%增值税发票
询价
Nanotec
专业铁帽
ZIP25
10
原装铁帽专营,代理渠道量大可订货
询价
NANOTEC
20+
ZIP25
67500
原装优势主营型号-可开原型号增税票
询价
SAMSUNG/三星
2447
ZIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多IMT65R020M2H供应商 更新时间2025-5-17 16:47:00