IMSQ120R040M2HH中文资料CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package数据手册Infineon规格书

描述 Description

CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply.
The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-side cooled devices enable a more optimized PCB layout, which in turn reduces the effects of parasitic components and stray inductances, while also providing enhanced thermal management capabilities.The top-side cooled Q-DPAK Dual half-bridge package is introducing a new era in cooling, energy efficiency, design flexibility and performance.

特性 Features

• VDSS= 1200 V at Tvj= 25°C
• IDDC= 40 A at TC= 100°C
• RDS(on) = 40 mΩ, VGS= 18 V, Tvj= 25°C
• Very low switching losses
• Overload operation up to Tvj= 200°C
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage 4.2 V
• Robust against parasitic turn on
• Robust body diode for hard commutation
• .XT interconnection technology

优势:
• Higher power density
• Enabling automated assembly
• Less complex designs needed
• Outstanding thermal performance vs BSC
• Improve system power losses
• Enable a VRMS of 950 V with PD 2
• Lower TCO cost or BOM cost