丝印：65R015M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.20225 Mbytes 页数：19 Pages

INFINEON

英飞凌

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.20225 Mbytes 页数：19 Pages

INFINEON

英飞凌

采用 TOLT 封装的 CoolSiC ™ MOSFET 650 V G2

CoolSiC™ MOSFET 650 V G2 in TOLT package • Excellent figures of merit (FOMs)\n• High robustness and overall quality\n• Flexible driving voltage range\n• Support for unipolar driving (VGS(off)=0)\n• Lower thermal resistance\n• Improved package interconnect with .XT\n• Top-side cooling\n\n优势:\n• Enables BOM savings\n• Maximizes the system pe;

Infineon

英飞凌

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.36491 Mbytes 页数：18 Pages

INFINEON

英飞凌

MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.5321 Mbytes 页数：16 Pages

INFINEON

英飞凌

MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.52447 Mbytes 页数：16 Pages

INFINEON

英飞凌