ILQ621-X009中文资料威世科技数据手册PDF规格书

DESCRIPTION

The ILD621/ILQ621 and ILD621GB/ILQ621GB are

multi-channel phototransistor optocouplers that use GaAs

IRLED emitters and high gain NPN silicon phototransistors.

These devices are constructed using double molded

insulation technology. This assembly process offers a

withstand test voltage of 7500 VDC.

The ILD621/ILQ621GB is well suited for CMOS interfacing

given the CTRCEsat of 30 minimum at IF of 1.0 mA. High

gain linear operation is guaranteed by a minimum CTRCE of

100 at 5.0 mA. The ILD/Q621 has a guaranteed CTRCE

50 minimum at 5.0 mA. The transparent ion shield insures

stable DC gain in applications such as power supply

feedback circuits, where constant DC VIO voltages are

present.

FEATURES

• Alternate source to TLP621-2/-4 and

TLP621GB-2/-4

• High collector emitter voltage, BVCEO = 70 V

• Dual and quad packages feature:

- Lower pin and parts count

- Better channel to channel CTR match

- Improved common mode rejection

• Isolation test voltage, 5300 VRMS

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC and

WEEE 2002/96/EC

AGENCY APPROVALS

• UL1577, file no. E52744 system code H or J, double

protection

• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending

available with option 1

• BSI IEC 60950; IEC 60065

• FIMKO