High Speed Two-Channel Digital Isolators

Features • High speed: 150 Mbps typical (S-Series) • High temperature: −40 °C to +125 °C (T-Series and V-Series • 6 kVRMS Reinforced Isolation; 1.2 kVRMS Working Voltage (V-Series) • 2.7 to 5.5 volt supply range • 100 kV/μs Common Mode Transient Immunity • No carrier or clock for low EMI emi

文件：760.91 Kbytes 页数：20 Pages

NVE

6 kV, 125C, 2-Channel (both same direction) Isolator, Wide SOIC

The IL711VE is a 6 kVrms isolation, 125C, 3.3/5V, two channel, isolated, 110 Mbps, CMOS-compatible logic buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, and 50 kV/microsecond transient immunity. 16-pin wide-body SOIC package with True 8™ mm creepage.

NVE

N-Channel Power MOSFETs, 2.25A, 350-400V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：147.35 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

IRF710-713 MTP2N35/2N40 N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：791.66 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 2.25 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. • Low RDS(on) • VGS Rated at ±20 V

文件：791.66 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司