丝印：K50MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.80274 Mbytes 页数：17 Pages

INFINEON

英飞凌

1200 V、50 A IGBT，带反并联二极管，采用 TO-247PLUS 4 引脚封装

\n优势:\n• Technology with the highest power density with up to 140A rating\n• Optimized performance in application conditions\n• Lowest conduction losses\n• Lowest switching losses\n• Humidity robustness under harsh environment\n• Improved EMI performance\n• Highest power density with heat dissipatio;

Infineon

英飞凌

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.15V@IC=50A · High Speed Switching · Low Power Loss APPLICATIONS · Industrial UPS · String inverter · Welding

文件：314.46 Kbytes 页数：3 Pages

ISC

无锡固电

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.87023 Mbytes 页数：17 Pages

INFINEON

英飞凌