IKW40N65RH5

650 V Hybrid CoolSiC™ IGBT Discrete; \n优势:\n• Highest efficiency\n• Increased power density\n• Plug & play replacement of the pure silicon devices\n• Easy upgrade of existing designs for higher efficiency\n• Reduced cooling effort\n• Excellent for paralleling\n;

IKW40N65RH5

丝印：K40ERH5；Package：PG-TO247-3；TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode

IKW40N65RH5XKSA1

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：INDUSTRY 14

IKZA40N65RH5

TRENCHSTOPTM5H5IGBTco-packedwithhalf-rated6thgenerationCoolSiCTMSchottkybarrierdiode

IKW40T120

Infineon
TO-247