650 V、40 A IGBT 分立器件，带碳化硅肖特基二极管

\n优势:\n• Highest efficiency\n• Increased power density\n• Plug & play replacement of the pure silicon devices\n• Easy upgrade of existing designs for higher efficiency\n• Reduced cooling effort\n• Excellent for paralleling;

Infineon

英飞凌

丝印：K40ERH5；Package：PG-TO247-3；TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode

文件：1.5658 Mbytes 页数：15 Pages

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：INDUSTRY 14

Infineon

英飞凌

TRENCHSTOPTM 5 H5 IGBT co-packed with half-rated 6th generation CoolSiCTM Schottky barrier diode

文件：1.52605 Mbytes 页数：15 Pages

Infineon

英飞凌