1200 V、15 A IGBT，带反并联二极管，采用 TO-247 封装

High Speed 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT6 co-packed with a very soft and fast recovery anti-parallel diode in a TO247 package is optimized for the best compromise between switching and conduction losses. • High efficiency in hard switching and resonant topologies\n• Easy paralleling capability due to positive temperature coefficient in VCEsat\n• Low EMI\n• Low Gate Charge QG\n• Very soft, fast recovery anti-parallel diode\n• High ruggedness, temperature stable behavior\n• Very tight parameter distri;

Infineon

英飞凌

丝印：K15MBH6；Package：PG-TO247-3；High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode

文件：2.14502 Mbytes 页数：16 Pages

INFINEON

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200 V 15A TO247-3-46

INFINEON

英飞凌

QFN

INFINEON

英飞凌

上传：深圳市维尔达电子有限公司

TO-247

INFINEON/英飞凌

上传：深圳市华芯伟电子科技有限公司