丝印：IKQ；Package：SMAJ；Transient Voltage Suppressor Diode Series

文件：350.04 Kbytes 页数：5 Pages

Bourns

伯恩斯

丝印：K100MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 100 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed

文件：1.61856 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K100MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 1200 V • IC = 100 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C • Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Short circuit ruggedness 8 μs • Wide range of dv/dt controll

文件：1.60691 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode

Features • VCE = 1200 V • IC = 120 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode • Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C • Optimized for high efficiency in high s

文件：1.69372 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120MCS7；Package：PG-TO247-3-PLUS-NN3.7；Short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 1200 V • IC = 120 A • IGBT co-packed with full current, soft and low Qrr diode • Low saturation voltage VCEsat = 2.0 V at Tvj = 175°C • Optimized for hard switching topologies (2-L inverter, 3-L NPC T-type, ...) • Short circuit ruggedness 8 μs • Wide range of dv/dt controll

文件：1.57433 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 120 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.17588 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K150EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features • VCE = 650 V • IC = 150 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete prod

文件：2.04798 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K50MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 50 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.63369 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K75MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP™ IGBT 7 Technology

High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode Features • VCE = 1200 V • IC = 75 A • Maximum junction temperature Tvjmax = 175°C • Best-in-class high speed IGBT co-packed w

文件：1.60601 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：K120GCP2；Package：PG-TO247-3-PLUS-NN8.5；Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode

Features • VCE = 750 V • IC = 120 A • Low saturation voltage VCEsat = 1.4 V • Low switching losses • Short circuit ruggedness 3 μs • IGBT co-packed with full current, soft and fast recovery diode • Optimized for hard switching topologies up to 10 KHz • Package backside suitable for reflow

文件：1.63441 Mbytes 页数：17 Pages

Infineon

英飞凌