650 V、15 A IGBT，带反并联二极管，采用 TO-263 封装

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.  • 650 V breakthrough voltage\nCompared to Infineon’s HighSpeed 3 family\n • Factor 2.5 lower Qg\n• Factor 2 reduction in switching losses\n• 200 mV reduction in VCEsat\n• Co-packed with Infineon’s new Rapid Si-diode technology\n• Low COES/EOSS\n• Mild positive temperature coefficient VCEsat\n• Tempe;

Infineon

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丝印：K15EEH5；Package：PG-TO263-3；TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode

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Infineon

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INFINEO
MDIP-24

INFINEO

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INFINEON/英飞凌
24-PowerDIP

INFINEON/英飞凌

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INFINEON/英飞凌
I

INFINEON/英飞凌

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