N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤5.5mΩ • Enhancement mode • Fa

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无锡固电

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

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N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.72 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=30V, Rds(on)=0.006ohm, Id=140A??

Description Fifth Generation HEXFETs from international Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swiching speed and urggedized device design that HEXFET Power MOSFETs are well known for, provides

文件：436.44 Kbytes 页数：10 Pages

IRF