N-Channel MOSFET Transistor

• DESCRIPTION • Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. • FEATURES • Static drain-source on-resistance: RDS(on) ≤4.0mΩ • Enhancement mode • Fast Switching

文件：339.15 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：107.46 Kbytes 页数：8 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：2.99281 Mbytes 页数：8 Pages

KERSEMI

isc N-Channel Mosfet Transistor

Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

文件：139.55 Kbytes 页数：2 Pages

ISC

无锡固电