IIRF1010Z

N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤7.5mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

IIRFR1010Z

N-ChannelMOSFETTransistor

IMXRT1010CEC

i.MXRT1010CrossoverProcessorsDataSheetforConsumerProducts

IMXRT1010IEC

i.MXRT1010CrossoverProcessorsDataSheetforIndustrialProducts

IPT-1010

ICReferenceDesignTransformers

IRF1010

N-ChannelPowerMOSFET

IRF1010E

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

•AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF1010E

UltraLowOn-Resistance

IRF1010E

N-ChannelMOSFETTransistor

IRF1010EL

PowerMOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr