N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤190mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.48 Kbytes 页数：2 Pages

ISC

无锡固电

600V CoolMOS E6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：1.15584 Mbytes 页数：17 Pages

Infineon

英飞凌

600V CoolMOS™ E6 Power Transistor

文件：958.99 Kbytes 页数：18 Pages

Infineon

英飞凌

600V CoolMOS™ E6 Power Transistor

文件：958.98 Kbytes 页数：18 Pages

Infineon

英飞凌