IIPW60R040C7

N-Channel MOSFET Transistor

•DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤40mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IIPP60R040C7

N-ChannelMOSFETTransistor

•DESCRIPTION •CombinetheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.04Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

IPB60R040C7

IscN-ChannelMOSFETTransistor

IPB60R040C7

600VCoolMOS짧C7PowerTransistor

IPB60R040C7

N-ChannelSuper-JMOSFET

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=65mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

IPP60R040C7

N-ChannelMOSFETTransistor

•DESCRIPTION •CombinetheexperienceoftheleadingSJMOSFETsupplier withhighclassinnovation •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.04Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice

IPP60R040C7

MetalOxideSemiconductorFieldEffectTransistor

IPW60R040C7

N-ChannelMOSFETTransistor

•DESCRITION •Suitableforhardandsoftswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤40mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

IPW60R040C7

MetalOxideSemiconductorFieldEffectTransistor

IPZ60R040C7

MetalOxideSemiconductorFieldEffectTransistor