丝印：H40QR5L；Package：PG-TO247-3-STD-NN2.5；Reverse-Conducting IGBT with monolithic body diode

Features • VCE = 1400 V • IC = 40 A • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, temperature stable behavior • Very low VCEsat • Easy paralleling capability due to positive temperature coe

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英飞凌

1400 V、40 A IGBT 分立器件，带反向传导二极管，采用 TO-247 3 引脚封装

\n优势:\n• Lower power losses in application\n• Lower device stress in cookware\n• High energy efficiency\n• Higher system power capability\n• Better robustness and reliability\n• Preferred design flexibility\n• Narrow power losses distribution\n• Advanced thermal performance;

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英飞凌