High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120

Features:

TRENCHSTOPTM technology offering

• best in class switching performance: less than 500µJ total switching losses achievable

• very low VCEsat

• low EMI

• maximum junction temperature 175°C

• qualified according to JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

Applications:

• solar inverters

• uninterruptible power supplies

• welding converters

• converters with high switching frequency

IGW25N120H3属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。英飞凌科技公司制造生产的IGW25N120H3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。