IGT65R025D2

丝印：65R025D2；Package：PG-HSOF-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency

IGT65R025D2

CoolGaN™ Transistor 650 V G5

• 650 V e-mode power transistor\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Low dynamic RDS(on)\n• High ESD robustness: 2 kV HBM - 1 kV CDM\n• Bottom-side cooled package\n• JEDEC qua;

IGLT65R025D2

CoolGaN™Gen2650VCoolGaN™enhancement‑modePowerTransistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency

IGOT65R025D2

CoolGaN™Gen2650VCoolGaN™enhancement‑modePowerTransistor

Features •Enhancementmodetransistor‑NormallyOFFswitch •Ultrafastswitching •Noreverse‑recoverycharge •Capableofreverseconduction •Lowgatecharge,lowoutputcharge •Superiorcommutationruggedness •ESD(HBM/CDM)JEDECstandards Benefits •Improvessystemefficiency

IGW100N60H3

Infineon
TO-247-3