丝印：65R025D2；Package：PG-HSOF-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.1951 Mbytes 页数：12 Pages

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CoolGaN ™晶体管 650 V G5

• 650 V e-mode power transistor\n• Ultrafast switching\n• No reverse-recovery charge\n• Capable of reverse conduction\n• Low gate charge, low output charge\n• Superior commutation ruggedness\n• Low dynamic RDS(on)\n• High ESD robustness: 2 kV HBM - 1 kV CDM\n• Bottom-side cooled package\n• JEDEC qua;

Infineon

英飞凌

CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.06199 Mbytes 页数：12 Pages

INFINEON

英飞凌

CoolGaN™ Transistor 650 V G5

Features • Enhancement mode transistor • Ultra‑fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate and output charge • Superior commutation ruggedness • 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half‑br

文件：1.35357 Mbytes 页数：17 Pages

INFINEON

英飞凌

CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：857.66 Kbytes 页数：10 Pages

INFINEON

英飞凌