丝印：40R070D1；Package：PG-HSOF-8-3；400V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified according to JEDEC Standards (JESD47 and JESD22) Benefits 

文件：533.08 Kbytes 页数：16 Pages

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氮化镓 CoolGaN™ 400V 增强型功率晶体管 IGT40R070D1 实现超高能效与可靠性

\n优势:\n• 凭借 400V 级最佳品质因数（FOM）提升效率\n• 噪声电平极低\n• 与同类最佳硅开关相比，总谐波失真（THD）更低\n• 兼容现有控制 IC;

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丝印：40L070D1；Package：PG-HSOF-8；400V CoolGaN??enhancement-mode Power Transistor

文件：529.79 Kbytes 页数：16 Pages

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Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability

• Enhancement-mode transistor – normally-off switch\n• No reverse recovery charge\n• Low gate charge, low output charge\n• Qualified according to JEDEC Standards (JESD47 and JESD22)\n• Improves efficiency due to best figure-of-merit (FOM) in the 400V class\n• Lower THD compared to the best-in-class ;

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