IGI60F5050A1L中文资料英飞凌数据手册PDF规格书

特性 Features

• Two 140 ㏁ GaN switches in half-bridge configuration with dedicated high- and low-side isolated gate drivers

Source / sink driving current up to 1 / 2 A

Application-configurable turn-on and turn-off speed

• Fast input-to-output propagation (typ. 47 ns) with extremely small channel-to-channel mismatch

• PWM input signal (switching frequency up to 3 MHz)

• Standard logic input levels compatible with digital controllers

• Wide supply range

• Single gate driver supply voltage possible (typ. 8 V) with fast UVLO recovery

• Low-side open source for current sensing with external shunt resistor

• Galvanic input-to-output isolation based on robust coreless transformer technology

• Gate driver with very high common mode transient immunity (CMTI) > 300 V/ns

• Thermally enhanced 8 x 8 mm QFN-28 package

• Product is fully qualified acc. to JEDEC for Industrial Applications

描述 Description

IGI60F1414A1L combines a half-bridge power stage consisting of two 140 ㏁ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with dedicated gate drivers in a small 8 x 8 mm QFN-28 package. In the low-to-medium power area (example application in Figure 1), it is thus ideally suited to support the design of high-density AC/DC chargers and adapters, utilizing the superior switching behavior of CoolGaNTM HEMTs.

Infineon’s CoolGaNTM and related power switches provide a very robust gate structure. When driven by a continuous gate current of a few mA in the “on” state, a minimum on-resistance Rdson is always guaranteed.

Due to the GaN-specific low threshold voltage and the fast switching transients, a negative gate drive voltage is required in certain applications to both enable fast turn-off and avoid cross-conduction effects. This can be achieved by the well-known RC interface between driver and switch. A few external SMD resistors and caps enable easy adaptation to different power topologies.

The driver utilizes on-chip coreless transformer technology (CT) to achieve signal level-shifting to the high-side.

Further, CT guarantees robustness even for extremely fast switching transients above 300 V/ns.

Applications

• Charger and adapters

• Server, telecom & networking SMPS

• Low-power motor drive

• LED lighting