600V applications offering

IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses • Smooth switching performance leading to low EMI levels • V

文件：122.04 Kbytes 页数：6 Pages

Infineon

英飞凌

IGBT裸片(400V-1200V)

The reverse conducting TRENCHSTOP™ IGBT RC-Serie with the unique TRENCHSTOP™ and Fieldstop technology  for hard switching applications.\n IGBT chip with monolithically integrated diode in packages offering space saving advantage. • Monolithical diode included\n• Optimized V CE(sat) and V F for low conduction losses\n• Smooth switching performance leading to low EMI levels\n• Very tight parameter distribution\n• Operating range of 1 to 20kHz\n• Maximum junction temperature 175°C\n• Short circuit capability of 5μs\n\n优势:;

Infineon

英飞凌

IGBT with integrated diode in packages offering space saving advantage

文件：1.89039 Mbytes 页数：16 Pages

Infineon

英飞凌

INFINEON/英飞凌
IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司

INFINEON/英飞凌
IPM模块

INFINEON/英飞凌

上传：深圳市正纳电子有限公司