丝印：37SE1；Package：PG-TSON-6；CoolGaNTM Transistor 120 V G3

Features • Enhancement mode power transistor - normally OFF switch • No reverse recovery charge • Reverse conduction capability • Low gate charge, low output charge • Qualified according to JEDEC for target applications

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CoolGaN™ Transistor 120 V G3 in PQFN 3x5, 2.7 mΩ

CoolGaN™ Transistor 120 V G3 in PQFN 3x5, 2.7 mΩ • 120 V e-mode power transistor\n• Dual-side cooled package\n• No reverse recovery charge\n• Reverse conduction capability\n• Low gate charge, low output charge\n• Qualified according to JEDEC\n\n优势:\n• Best-in-class power density\n• Highest efficiency\n• Improved thermal management\n• Enabling smal;

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IPM模块

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INFINEON/英飞凌
IPM模块

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IGBT

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