1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as s • 1.5A, 500V\n• Single Pulse Avalanche Energy Rated\n• Nanosecond Switching Speeds\n• 150oC Operating Temperature\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”;

Renesas

瑞萨

ZERO VOLTAGE CROSSING 600 V TRIAC DRIVER OPTOCOUPLER

DESCRIPTION The IL410 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double

文件：107.82 Kbytes 页数：6 Pages

SIEMENS

西门子

Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current

文件：156.33 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current

DESCRIPTION The IL410 and IL4108 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package. FEATURES • High input se

文件：737.16 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司