Inductive sensor

文件：184.64 Kbytes 页数：3 Pages

IFM

易福门电子

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

文件：25.07 Kbytes 页数：2 Pages

NTE

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：105.63 Kbytes 页数：5 Pages

POINN