Inductive sensor

文件：184.64 Kbytes 页数：3 Pages

IFM

易福门电子

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：70.67 Kbytes 页数：7 Pages

INTERSIL

Nanosecond Switching Speeds

文件：48.36 Kbytes 页数：2 Pages

ISC

无锡固电

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

文件：68.75 Kbytes 页数：7 Pages

INTERSIL