KDB3200S

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERVOLTAGERANGE200VoltsCURRENT3.0Amperes

FEATURES *Goodforautomationinsertion *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any

KK3200A

FASTTURN-OFFTHYRISTORS

KMP_3200

VerticalMountToroidalInductors

KP3200A

Phasecontrolthyristor

KSLDB3200S

SCHOTTKYBARRIERRECTIFIERVOLTAGE200VoltsCURRENT3.0Ampere

FEATURES *Goodforautomationinsertion *Surgeoverloadrating-120amperespeak *Idealforprintedcircuitboard *Reliablelowcostconstructionutilizingmolded *Glasspassivateddevice *Polaritysymbolsmoldedonbody *Mountingposition:Any *Weight:0.33gram

KTC3200

EPITAXIALPLANARNPNTRANSISTOR

KTC3200

EPITAXIALPLANARNPNTRANSISTOR(LOWNOISEAUDIOAMPLIFIER)

LOWNOISEAUDIOAMPLIFIERAPPLICATION. FEATURES •TheKTC3200isatransistorforlowfrequencyandlownoiseapplications. Thisdeviceisdesignedtoowernoisefigureintheregionoflowsignal sourceimpedance,andtolowerthepulsenoise. Thisisrecommendedforthefirststage

KTC3200

EPITAXIALPLANARNPNTRANSISTOR

FEATURES •TheKTC3200isatransistorforlowfrequencyand lownoiseapplications.Thisdeviceisdesignedto owernoisefigureintheregionoflowsignal sourceimpedance,andtolowerthepulsenoise. Thisisrecommendedforthefirststagesofequalizer amplifiers. •

KTC3200

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:120V Operatingandstoragejunctiontemperaturerange Tstg:-55℃to+150℃ TJ:150℃

KTC3200

SiliconNPNtransistorinaTO-92PlasticPackage

Descriptions SiliconNPNtransistorinaTO-92PlasticPackage. Features Lownoise,highhFE,highbreakdownvoltage. Applications Lownoiseaudioamplifierapplication.