GaN Power Transistors

文件：875.81 Kbytes 页数：7 Pages

RFHIC

晶体管

RFHIC

UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 5V, 8V, 12V VDD UVLO optio

文件：1.81206 Mbytes 页数：47 Pages

TI

德州仪器

UCC21330x 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater than 125V/ns • Up to 25V VDD output drive supply – 8V VDD UVLO options • Swi

文件：1.82951 Mbytes 页数：45 Pages

TI

德州仪器

UCC21330x-Q1 Automotive 4A, 6A, 3kVRMS Isolated Dual-Channel Gate Driver

1 Features • Universal: dual low-side, dual high-side or halfbridge driver • AEC-Q100 qualified with the following results – Device temperature grade 1 • Junction temperature range –40 to +150°C • Up to 4A peak source and 6A peak sink output • Common-mode transient immunity (CMTI) greater

文件：1.81427 Mbytes 页数：47 Pages

TI

德州仪器