IDW20G65C5其他IC数据手册库存现货英飞凌-114ic电子网

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IDH20G65C5	文件：417.84 Kbytes Page：2 Pages	650VSiCthinQ!??Generation5diodes Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IDW20G65C5	文件：417.84 Kbytes Page：2 Pages	650VSiCthinQ!??Generation5diodes Features ■V₂at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (₁175°C) ■Improvedsurgecapability ■Pb-freeleadplating ☐10yearsmanufacturingof	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IDW20G65C5	文件：1.1743 Mbytes Page：11 Pages	SiCSiliconCarbideDiode 1Description ThinQ!™Generation5representsInfineonleadingedgetechnologyfortheSiC SchottkyBarrierdiodes.Thankstothemorecompactdesignandthin-wafer technology,thenewfamilyofproductsshowsimprovedefficiencyoverallload conditions,resultingfromboththeimprovedtherm	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
IDW20G65C5B	文件：742.74 Kbytes Page：11 Pages	650VSiCSchottkyDiode	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

更多IDW20G65C5其他IC供应商更新时间2024-6-5 10:50:00