3.3V CMOS 10-BIT BUFFERS

DESCRIPTION: The FCT3827A/B 10-bit bus drivers are built using an advanced dual metal CMOS technology. These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables fo

文件：102.44 Kbytes 页数：7 Pages

IDT

3.3V CMOS 10-BIT BUFFERS

DESCRIPTION: The FCT3827A/B 10-bit bus drivers are built using an advanced dual metal CMOS technology. These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables fo

文件：102.44 Kbytes 页数：7 Pages

IDT

3.3V CMOS 10-BIT BUFFERS

DESCRIPTION: The FCT3827A/B 10-bit bus drivers are built using an advanced dual metal CMOS technology. These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables fo

文件：102.44 Kbytes 页数：7 Pages

IDT

3.3V CMOS 10-BIT BUFFERS

DESCRIPTION: The FCT3827A/B 10-bit bus drivers are built using an advanced dual metal CMOS technology. These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables fo

文件：102.44 Kbytes 页数：7 Pages

IDT

3.3V CMOS 10-BIT BUFFERS

DESCRIPTION: The FCT3827A/B 10-bit bus drivers are built using an advanced dual metal CMOS technology. These high speed, low power buffers are ideal for high-performance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NAND-ed output enables fo

文件：102.44 Kbytes 页数：7 Pages

IDT