3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)

DESCRIPTION: The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-he-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：19.28 Kbytes 页数：9 Pages

IDT

Package：36-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 36SOJ

Renesas Electronics America Inc

Package：36-BSOJ（0.400"，10.16mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 4MBIT PARALLEL 36SOJ

Renesas Electronics America Inc

3.3V CMOS Static RAM

Description The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：72.68 Kbytes 页数：9 Pages

IDT

3.3V CMOS Static RAM 4 Meg (512K x 8-Bit)

Features ◆ 512K x 8 advanced high-speed CMOS Static RAM ◆ JEDEC Center Power / GND pinout for reduced noise ◆ Equal access and cycle times — Commercial and Industrial: 10/12/15ns ◆ Single 3.3V power supply ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inputs and outputs

文件：189.42 Kbytes 页数：11 Pages

RENESAS

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3.3V CMOS Static RAM

Description The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized as 512K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for hi

文件：72.68 Kbytes 页数：9 Pages

IDT