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型号	下载订购	功能描述	制造商上传企业	LOGO
IDT71V3559SA	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA	文件：298.78 Kbytes Page：28 Pages	Synchronous ZBT SRAMs 文件：298.78 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75BG	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75BGI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75BQ	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75BQI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75PF	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA75PFI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA80BG	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3559SA80BGI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT

详细参数

型号：
IDT71V3559SA
功能描述：
IC SRAM 4MBIT 75NS 119BGA
RoHS：
否
类别：
集成电路(IC) >> 存储器
系列：
-
标准包装：
576
系列：
- 格式 -
存储器：
闪存
存储器类型：
闪存 - NAND
存储容量：
512M（64M x 8）
速度：
-
接口：
并联
电源电压：
2.7 V ~ 3.6 V
工作温度：
-40°C ~ 85°C
封装/外壳：
48-TFSOP（0.724，18.40mm 宽）
供应商设备封装：
48-TSOP
包装：
托盘
其它名称：
497-5040

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	IDT71V3559SA85BQI8	IDT	23+	165-CABGA(13x15)	3200	专业分销产品!原装正品!价格优势!	询价
深圳市斌腾达科技有限公司	IDT71V3559SA85BQI8	IDT, Integrated Device Technol	21+	100-VFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	IDT71V3559SA85BQI8	IDT, Integrated Device Technol	24+	165-CABGA(13x15)	56200	一级代理/放心采购	询价
深圳市科雨电子有限公司	IDT71V3559SA85BQI8	IDT	25+	BGA-165	1001	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	IDT71V3559SA85BQGI8	IDT	22+	165CABGA (13x15)	9000	原厂渠道,现货配单	询价
深圳市安富世纪电子有限公司	IDT71V3559SA85BQI8	IDT, Integrated Device Techno	23+	165-CABGA13x15	7300	专注配单,只做原装进口现货	询价
深圳市宏捷佳电子科技有限公司	IDT71V3559SA85BQI	Renesas Electronics America In	25+	165-TBGA	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市芯为科技有限公司	IDT71V3559SA85BQI8	Renesas	25+	电联咨询	7800	公司现货,提供拆样技术支持	询价
深圳市冠亿通科技有限公司	IDT71V3559SA85BQ8	Renesas Electronics Corporatio			18500	全新原厂原装现货!受权代理!可送样可提供技术支持!	询价

更多IDT71V3559SA供应商更新时间2026-2-3 17:59:00

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