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型号	下载订购	功能描述	制造商上传企业	LOGO
IDT71V3557S	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S	文件：298.78 Kbytes Page：28 Pages	Synchronous ZBT SRAMs 文件：298.78 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75BG	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75BGI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75BQ	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75BQI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75PF	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S75PFI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S80BG	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT
IDT71V3557S80BGI	文件：996.97 Kbytes Page：28 Pages	128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs Description The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or 文件：996.97 Kbytes 页数：28 Pages	IDT	IDT

详细参数

型号：
IDT71V3557S
功能描述：
IC SRAM 4MBIT 75NS 119BGA
RoHS：
否
类别：
集成电路(IC) >> 存储器
系列：
-
标准包装：
2,000
系列：
MoBL® 格式 -
存储器：
RAM
存储器类型：
SRAM - 异步
存储容量：
16M（2M x 8，1M x 16）
速度：
45ns
接口：
并联
电源电压：
2.2 V ~ 3.6 V
工作温度：
-40°C ~ 85°C
封装/外壳：
48-VFBGA
供应商设备封装：
48-VFBGA（6x8）
包装：
带卷(TR)

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市勤思达科技有限公司	IDT71V3557S75P	IDT	09+	TQFP	5500	原装无铅,优势热卖	询价
深圳市联世界科技有限公司	IDT71V3557S85BG	IDT	24+/25+		69	原装正品现货库存价优	询价
深圳市福安瓯科技有限公司	IDT71V3557S85PF	IDT	25+	QFP	2569	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
深圳市一线半导体有限公司	IDT71V3557S75PF	IDT	24+	QFP	61		询价
芯有半导体（深圳）有限公司	IDT71V3557S85PF	IDT	05+	原厂原装	4218	只做全新原装真实现货供应	询价
深圳市毅创腾电子科技有限公司	IDT71V3557SA80BQGI8	IDT	23+	165-CABGA(13x15)	39257	专业分销产品!原装正品!价格优势!	询价
深圳市壹芯创科技有限公司	IDT71V3557SA85BG	IDT	22+	BGA	5000	全新原装现货!自家库存!	询价
深圳市佳鑫美电子科技有限公司	IDT71V3557S75P	IDT	25+	QFP	2650	原装优势!绝对公司现货	询价
深圳市振宏微科技有限公司	IDT71V3557S75PF	IDT	23+	BGA	8659	原装公司现货!原装正品价格优势.	询价
深圳市斌腾达科技有限公司	IDT71V3557SA85BQI8	IDT, Integrated Device Technol	21+	165-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价

更多IDT71V3557S供应商更新时间2026-2-9 11:04:00

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